| PART |
Description |
Maker |
| MGFS45V2123A_04 MGFS45V2123A MGFS45V2123A04 |
2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V5964A C455964A1 |
5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC45V5053A C455053A |
5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
5.05-5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFS45V2325A11 |
2.3-2.5 GHz BAND / 32W
|
Mitsubishi Electric Semiconductor
|
| MGFS45V2123A MGFS45V2123A11 |
2.1-2.3 GHz BAND / 32W
|
Mitsubishi Electric Semiconductor
|
| MGFC45V6472A_04 MGFC45V6472A MGFC45V6472A04 |
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC45V5867 |
MGFC45V5867
5.8~6.75GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| DES9157001 DES9157001AC DES9157001DGAZSMD SP8808 S |
3.3GHz ÷ 8 Fixed Modulus Divider
3.3GHz ± 8 Fixed Modulus Divider
3.3GHz 8 Fixed Modulus Divider
6.5V; 345mW; 3.3GHz 8fixed modulus divider
|
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
| IRPLLNR2U IRPLLNR2E |
32W Fully-integrated linear lighting ballast, IR21571, U.S. version, 120VAC line, 32W/T8 lamp
Fully-integrated linear lighting ballast, IR21571, European version, 230VAC line, 36W/T8 lamp
|
International Rectifier
|
| TDA2050 |
32W Hi-Fi AUDIO POWER AMPLIFIER
|
Tiger Electronic Co.,Ltd
|
